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X1G0048010039 SG2016CAN 26MHZ CMOS -40+105愛普生編程晶振全硅MEMS振蕩器詳細介紹

MEMS振蕩器市場前景

據(jù)行業(yè)猜測微機電體系振蕩器正以120％的年增加率替代石英振蕩器,還有的猜測微機電體系振蕩器是將以四倍的年增加率增加.X1G0048010039編程晶振,SG2016CAN 26MHZ CMOS -40+105晶振,愛普生全硅MEMS振蕩器

從對微機電體系上漲的行情猜測超越了前期對微機電體系芯片年增加為30％的猜測.

據(jù)介紹在消費電子和自動化愛普生晶振電子產(chǎn)品微型化出產(chǎn)及在單CMOS芯片上多振蕩器片上體系MEMS的驅動下,現(xiàn)有的250萬美元的MEMS振蕩器商場在2012年將增加到140萬美元.2012年之后,MEMS振蕩器將在手機守時芯片方面到達10億美元的市場價值.

全硅MEMS振蕩器的制作方法及其長處：

MEMS振蕩器是由兩顆芯片；一為全硅MEMS諧振器,一為具溫補功用之發(fā)動電路暨鎖相環(huán)CMOS芯片；運用規(guī)范半導體芯片MCM封裝方法完結.

2.MEMS出產(chǎn)制程,采全自動化規(guī)范半導體制作流程；與出產(chǎn)線上人工本質無關.如一切今天在一切電子產(chǎn)品規(guī)劃內(nèi)所運用的IC一般；具有優(yōu)秀的穩(wěn)定性以及質量；不易在出產(chǎn)進程中呈現(xiàn)人為失誤.

3.支撐頻率、精度、電壓可編程；可滿意客戶不同規(guī)范組合之轟動器需求.

4.支撐一切業(yè)界規(guī)范封裝(7050,5032,3225,2520),一切規(guī)范產(chǎn)品交貨期僅需2~4周.

5.MEMS振蕩器封裝無密封問題,規(guī)范MCM封裝,防震性達石英產(chǎn)品的25倍.出貨不良率低于1dppm.

6.MEMS振蕩器內(nèi)部起振鎖相環(huán)芯片,具有溫補功用；頻率精度相對于溫度的改動為線性聯(lián)系,規(guī)范所標明的頻率精度包括轟動頻偏、溫度頻偏、老化頻偏等.

7.MEMS產(chǎn)品之質量一致性乃透過規(guī)劃階段完結；與石英產(chǎn)品在量產(chǎn)階段操控質量之制作控管方法不同,體系廠商無須憂慮來料與量產(chǎn)樣品認證之不一致性.

特征
晶體振蕩器
頻率：20個標準頻率
（4MHZ至72MHZ）
輸出：CMOS
電源電壓：1.6 V 至 3.63 V
工作溫度：-20 °C 至 +70 °C
-40 °C 至 +105 °C
應用
物聯(lián)網(wǎng)、可穿戴設備
數(shù)據(jù)中心、倉儲
醫(yī)療、工業(yè)自動化X1G0048010039編程晶振,SG2016CAN 26MHZ CMOS -40+105晶振,愛普生全硅MEMS振蕩器

愛普生的SGxxxxCAN和SG-210STF是具有CMOS輸出的簡單封裝晶體振蕩器（SPXO）系列。
這些 SPXO 非常適合物聯(lián)網(wǎng)、晶振廠家可穿戴設備、醫(yī)療、工業(yè)自動化等各種應用。這些 SPXO 具有低電流消耗、1.6 V 至 3.63 V 的寬工作電壓和 -40 °C 至 85 °C 的寬工作溫度范圍，此外還可提供高達 105 °C 的工作溫度。
這些 SPXO 提供五種不同的封裝尺寸，從 2.0 × 1.6 mm 到 7.0 × 5.0 mm，并提供標準引腳輸出。

頻率 MHZ	頻率公差/工作溫度
	.DB	JG	JH
	±25 ×^10-6 -20 ºC 至 +70 ºC	±50 ×^10-6 -40 ºC 至 +85 ºC	±50 ×^10-6 -40 ºC 至 +105 ºC
4	-	X1G004801003000	X1G004801004900
8	-	X1G004801004500	X1G004801004600
10	-	X1G004801002900	X1G004801002700
12	X1G004801005000	X1G004801000700	X1G004801005100
12.288	X1G004801005200	X1G004801004400	X1G004801005300
14.7456	-	X1G004801005400	X1G004801005500
16	-	X1G004801001400	X1G004801005600
20	X1G004801005700	X1G004801005800	X1G004801001800
24	X1G004801005900	X1G004801000200	X1G004801004000
24.576	-	X1G004801006000	X1G004801003100
25	X1G004801002400	X1G004801001200	X1G004801003500
26	-	X1G004801000300	X1G004801003900
27	-	X1G004801006100	X1G004801002100
32	-	X1G004801006200	X1G004801006300
33.33	-	X1G004801006400	X1G004801006500
33.3333	-	X1G004801002600	X1G004801006600
40	-	X1G004801006700	X1G004801003600
48	X1G004801006800	X1G004801002000	X1G004801006900
50	X1G004801007000	X1G004801001300	X1G004801002800
72	X1G004801007100	X1G004801007200	X1G004801007300

Frequency Part number
[MHz] SG7050CAN (7.0 x 5.0) SG5032CAN (5.0 x 3.2) SG3225CAN (3.2 x 2.5)
±25 ppm ±50 ppm ±50 ppm ±25 ppm ±50 ppm ±50 ppm ±25 ppm ±50 ppm ±50 ppm
-20 to +70 °C -40 to +85 °C -40 to +105 °C -20 to +70 °C -40 to +85 °C -40 to +105 °C -20 to +70 °C -40 to +85 °C -40 to +105 °C
(Grade: TDB) (Grade: TJG) (Grade: TJH/KJH) (Grade: TDB) (Grade: TJG) (Grade: TJH/KJH) (Grade: TDB) (Grade: TJG) (Grade: TJH/KJH)
4 - X1G004481005100 X1G004481025200 - X1G004451003400 X1G004451019600 - X1G005961001115 X1G005961001215 8 - X1G004481001400 X1G004481025300 - X1G004451002100 X1G004451019700 - X1G005961000415 X1G005961001315 10 - X1G004481000500 X1G004481025400 - X1G004451001300 X1G004451017800 - X1G005961000515 X1G00596100141512 X1G004481025500 X1G004481000600 X1G004481025600 X1G004451019800 X1G004451002800 X1G004451019900 X1G005961001515 X1G005961000615 X1G00596100161512.288 X1G004481025700 X1G004481000100 X1G004481025800 X1G004451020000 X1G004451000100 X1G004451020100 X1G005961001715 X1G005961001815 X1G00596100191514.7456 - X1G004481002500 X1G004481025900 - X1G004451001900 X1G004451020200 - X1G005961002015 X1G005961002115 16 - X1G004481000700 X1G004481026000 - X1G004451000200 X1G004451020300 - X1G005961002215 X1G00596100231520 X1G004481012800 X1G004481000800 X1G004481026100 X1G004451020400 X1G004451001100 X1G004451020500 X1G005961002415 X1G005961000715 X1G00596100251524 X1G004481002200 X1G004481000200 X1G004481026200 X1G004451017200 X1G004451000300 X1G004451020600 X1G005961002615 X1G005961000115 X1G00596100271524.576 - X1G004481001600 X1G004481026300 - X1G004451002900 X1G004451020700 - X1G005961000815 X1G00596100281525 X1G004481011600 X1G004481000300 X1G004481026400 X1G004451009700 X1G004451000400 X1G004451020800 X1G005961002915 X1G005961000215 X1G00596100301526 - X1G004481003500 X1G004481026500 - X1G004451008200 X1G004451020900 - X1G005961003115 X1G00596100321527 - X1G004481000400 X1G004481026600 - X1G004451000500 X1G004451021000 - X1G005961003315 X1G00596100341532 - X1G004481000900 X1G004481026700 - X1G004451001400 X1G004451021100 - X1G005961003515 X1G00596100361533.33 - X1G004481017900 X1G004481026800 - X1G004451021200 X1G004451021300 - X1G005961003715 X1G005961003815
33.3333 - X1G004481003300 X1G004481026900 - X1G004451016700 X1G004451021400 - X1G005961003915 X1G005961004015 40 - X1G004481001500 X1G004481027000 - X1G004451001200 X1G004451021500 - X1G005961000915 X1G00596100411548 X1G004481022600 X1G004481001100 X1G004481027100 X1G004451014900 X1G004451000700 X1G004451011200 X1G005961004215 X1G005961000315 X1G00596100431550 X1G004481011200 X1G004481001200 X1G004481016000 X1G004451011500 X1G004451000800 X1G004451003600 X1G005961004415 X1G005961001015 X1G00596100451572 X1G004481027200 X1G004481018300 X1G004481027300 X1G004451021600 X1G004451021700 X1G004451021800 X1G005961004615 X1G005961004715 X1G005961004815

MEMS振蕩器與石英振蕩器比較

MEMS振蕩器以其杰出的特性,被認為是傳統(tǒng)的石英振蕩器的替代產(chǎn)品.

石英轟動器一般制作的方法及其缺陷：X1G0048010039編程晶振,SG2016CAN 26MHZ CMOS -40+105晶振,愛普生全硅MEMS振蕩器

1.石英產(chǎn)品交貨周期長.因為出產(chǎn)所需質料需來自于不同供貨商；包含芯片廠、基座廠商、石英晶棒廠商,以及廠內(nèi)的切開設備、出產(chǎn)職工等資源均會影響交貨周期.一般來說,在廠內(nèi)以及、出售途徑無庫存情況下,交貨周期由6~12周.而一般非常用、有源晶振很多出產(chǎn)之產(chǎn)品,其訂購周期長達8～16周.交貨周期不定：因為出產(chǎn)工序雜亂；任何一道工序發(fā)生過錯,該批出產(chǎn)均需從頭來過；形成交期重置.

2.石英產(chǎn)品密封不易確保；形成頻率誤差.石英切開后需鍍上水銀,其全體厚度決議了起振的頻率.封裝時需將內(nèi)部以氮氣填充,堅持與空氣阻隔以防止內(nèi)部質料氧化,形成頻率改動.或因封裝不良、或因轟動；均可能對外觀密封質量改動,即所謂漏氣.一般漏氣可能發(fā)生在石英廠出廠前的檢測；或到體系廠后出產(chǎn)完結測驗發(fā)現(xiàn)頻率偏移、或體系廠商出產(chǎn)測驗完結出貨后在客戶端發(fā)生不良.（類舉：如輪胎被釘子刺穿后,灰心時刻不等）

3.石英產(chǎn)品的防震性不良.石英本身易碎、怕摔.石英與起振芯片結合時所選用的點膠方法,以及運用的質料均會對轟動器封裝的穩(wěn)定性、一致性具有必定的影響.防震性不良,形成貨運進程可能有到貨不良、SMT打件損耗等.

4.石英產(chǎn)品的頻率精度與溫度聯(lián)系非線性聯(lián)系（或稱溫飄；一般為向下拋物線）.一般石英產(chǎn)品規(guī)范書上標明的頻率穩(wěn)定度（或精度）；一般為在25℃室溫；除此之外,還有所謂”溫飄”.因為其非線性的聯(lián)系,體系廠商在實驗室測驗內(nèi)測驗的精度,甚或運用凹凸溫測驗到的石英轟動器規(guī)范,并無法確保石英廠商在量產(chǎn)交貨階段所交給廠商的元件均能契合其要求的規(guī)范.因為非線性石英對溫度的特性,使得石英產(chǎn)品在物料進廠查驗時變得無所根據(jù),直到上線測驗,才有時機判別來料的質量.有時候因為石英質料的不良,在體系廠商SMD進程中通過回流銲（無鉛制程高達260℃）制程時也會對石英形成質變,使得轟動器的頻率發(fā)生偏移.

5.不同頻率轟動器；廠商需對石英貼片晶振做不同方法的切開、不同頻率起振的方法也需調配不同的芯片,支撐的電壓不同、或許需求的顫動、精度規(guī)范不同,轟動器內(nèi)部調配的起振芯片均不同.

一切石英廠商建廠后,除非增加出產(chǎn)線,不然出產(chǎn)產(chǎn)能固定；供貨有限.一切石英廠無法針對一切規(guī)范的轟動器預備出產(chǎn)線或具有出產(chǎn)規(guī)模；因而一般來說；單個廠商僅針對某些規(guī)范產(chǎn)品出產(chǎn),形成體系廠商客戶不行能選用的收購方針.即便體系廠商方針是減縮同類型產(chǎn)品的供貨商,但因為石英產(chǎn)品的特別性,以及其出產(chǎn)工藝上的約束,廠商的方針假如停留在僅對現(xiàn)有石英供貨商之間收購絕無法到達；而SITIME的全硅可編程轟動器,從規(guī)劃、出產(chǎn)上的根本性革新,具有供給廠商的條件.因為不行能為客戶廠商不同需求轟動器備料齊全,石英廠商間普遍存在同業(yè)調貨情況,即不同石英出產(chǎn)廠商透過同一品牌交貨給體系廠商,調貨交貨也意味著質量控管的空窗.因而一些體系廠商嚴正規(guī)則協(xié)作石英廠商不得有調貨供貨情況；以防止此無法操控之質量危險.

6.一般來說,石英廠商所做的作業(yè)為石英切開、與日系廠商購買基座、起振芯片；將石英以及芯片以特別黏膠結合后至于基座上,并進行填充氮氣密封.數(shù)十道繁復工序；且需求很多人工參加量產(chǎn)制作、質量管理.絕大部分石英廠商常見或偶見廠內(nèi)出產(chǎn)控管不良形成之產(chǎn)品污染、密封不良形成漏氣（使頻率違背規(guī)范）等不良現(xiàn)像.

X1G0048010039編程晶振,SG2016CAN 26MHZ CMOS -40+105晶振,愛普生全硅MEMS振蕩器

MEMS振蕩器是指通過微機電體系（MEMS）制作出的一種可編程的硅振蕩器,MEMS振蕩器的溫度穩(wěn)定性也比傳統(tǒng)晶振更好,不受環(huán)境溫度凹凸改動的影響.MEMS振蕩器歸于咱們一般所說的有源晶振.它是對傳統(tǒng)石英晶振32.768K有源晶振產(chǎn)品的一個升級更新?lián)Q代,防震效果是前者的25倍,具有不受振蕩影響、不易碎的特色.MEMS振蕩器特色

與傳統(tǒng)石英比較,全硅MEMS振蕩器不論從出產(chǎn)工藝仍是組件規(guī)劃結構上,都更契合現(xiàn)代電子產(chǎn)品的規(guī)范,也是對傳統(tǒng)石英產(chǎn)品的升級換代.*高性能模仿溫補技能使全硅MEMS振蕩器具有優(yōu)異的全溫頻率穩(wěn)定性,完全免除溫飄問題；可編程的途徑為體系規(guī)劃和縮短新產(chǎn)品開發(fā)周期供給必要的靈活性；完善的半導體出產(chǎn)鏈可讓全硅MEMS供貨期全面縮短,并提高需求應急的才能；全自動出產(chǎn)的IC結構在質量和可靠性方面有無可置疑的優(yōu)秀的一致性.

MEMS振蕩器的可靠性

頻率穩(wěn)定性特別是在不同溫度下的穩(wěn)定性,是電子工程師在挑選振蕩器時考慮的主要參數(shù)之一.因為每一個規(guī)劃都需求確保體系在整個作業(yè)溫度范圍內(nèi)正常運作.而溫飄(頻率隨溫度而明顯改動的現(xiàn)象)則是傳統(tǒng)石英產(chǎn)品的缺陷,難以單純從制作上戰(zhàn)勝.

MEMS振蕩器

深黑色曲線顯現(xiàn)出一個工業(yè)級-40℃-85℃石英振蕩器要到達全溫頻率穩(wěn)定性25PPM在技能上的難度.可以看到在凹凸溫的情況下,石英作為參閱時鐘其規(guī)劃余量較不充分,由此也增加了全體體系在工業(yè)級全溫發(fā)生不穩(wěn)定運轉的可能性.

同時也顯現(xiàn)了各種顏色的平衡線,代表了110個discera全硅MEMS振蕩器在-40℃-85℃范圍內(nèi)的實際總頻差.與石英振蕩器比較,這些工業(yè)級MEMS振蕩器頻率穩(wěn)定性不但可堅持在15PPM以下,其曲線更具有線性特征,為體系供給更大的規(guī)劃余量.

正因為全硅MEMS振蕩器運用溫度補償?shù)募寄?span>,從振蕩器規(guī)劃上處理了石英溫飄的煩惱,因而電子工程師在選料時有了更大的地步.他們能夠挑選50PPM的MEMS振蕩器來替代許多25PPM的石英,既可滿意體系所需規(guī)范,又可降低成本.或許,他們可選用25PPM的MEMS振蕩器來提高體系全體穩(wěn)定性.

MEMS振蕩器結構與作業(yè)原理

傳統(tǒng)的石英振蕩器是由壓電石英加上簡略的起振芯片和有源晶振SPXO金屬封裝組成的,其出產(chǎn)工藝包含：石英切開鍍銀、購買基座、起振芯片,以及將石英及芯片以特別黏膠結合后至于基座上,然后充填氮氣,用金屬封裝進行密封.而不同頻率、不同作業(yè)電壓振蕩器的發(fā)生,則是由石英的不同形狀、鍍銀厚度及所佩的起振芯片所決議.所以從出產(chǎn)工藝角度,石英工業(yè)是一個人工密集型的半自動化傳統(tǒng)工業(yè),其產(chǎn)品也遭到傳統(tǒng)原材料和工藝的約束：1.雜亂的出產(chǎn)程序導致供貨期的拖長及缺貨應急困難的現(xiàn)象；2.不同振蕩器規(guī)范需不同質料不同工藝,從而使制品缺少靈活性,無法為滿意不同運用而進行實時裝備；3.壓電石英對溫度敏感度高的特性,形成石英振蕩器的溫飄煩惱；4.石英易碎怕摔老化的缺陷需靠出產(chǎn)工藝和質量管理來處理,缺少質量和長時刻可靠性的一致性.為處理石英的內(nèi)涵缺陷,因而在時鐘組件的選料上開端轉向選用了全硅的產(chǎn)品結構,有一個全硅MEMS諧振器和一個可編程Analog CMOS驅動芯片堆棧,并以規(guī)范QFNIC封裝方法完結.

X1G0048010039編程晶振,SG2016CAN 26MHZ CMOS -40+105晶振,愛普生全硅MEMS振蕩器

編碼	型號	頻率	LxWxH/尺寸	輸出方式	電源電壓	工作溫度	頻率偏差
X1G0048010027	SG2016CAN	10.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010028	SG2016CAN	50.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010031	SG2016CAN	24.576000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010035	SG2016CAN	25.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010036	SG2016CAN	40.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010039	SG2016CAN	26.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010040	SG2016CAN	24.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010046	SG2016CAN	8.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010049	SG2016CAN	4.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010051	SG2016CAN	12.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010053	SG2016CAN	12.288000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010055	SG2016CAN	14.745600 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010056	SG2016CAN	16.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010063	SG2016CAN	32.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010065	SG2016CAN	33.330000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010066	SG2016CAN	33.333300 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010069	SG2016CAN	48.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0048010073	SG2016CAN	72.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	2.250 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010102	SG-8018CG	22.579200 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010103	SG-8018CG	64.478100 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010104	SG-8018CG	59.737100 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010105	SG-8018CG	64.342677 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010106	SG-8018CG	43.540157 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010107	SG-8018CG	25.600000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010108	SG-8018CG	19.660800 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010110	SG-8018CG	85.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010111	SG-8018CG	63.055823 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010112	SG-8018CG	42.669354 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010122	SG-8018CG	74.250000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010123	SG-8018CG	13.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010124	SG-8018CG	20.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010129	SG-8018CG	12.568000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010130	SG-8018CG	6.940000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010131	SG-8018CG	3.072000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010132	SG-8018CG	6.780000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010133	SG-8018CG	13.560000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010134	SG-8018CG	27.120000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010135	SG-8018CG	4.096000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010136	SG-8018CG	54.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010139	SG-8018CG	7.372800 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010140	SG-8018CG	1.843200 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010141	SG-8018CG	11.289600 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010142	SG-8018CG	11.289600 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010143	SG-8018CG	14.318180 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010144	SG-8018CG	3.686400 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010145	SG-8018CG	3.686400 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010146	SG-8018CG	49.152000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010147	SG-8018CG	4.194304 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010148	SG-8018CG	16.483200 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010149	SG-8018CG	51.840000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010150	SG-8018CG	77.760000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010151	SG-8018CG	12.800000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010152	SG-8018CG	1.024000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010153	SG-8018CG	0.819200 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010154	SG-8018CG	37.125000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010155	SG-8018CG	148.500000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010156	SG-8018CG	74.250000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010157	SG-8018CG	13.225600 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010158	SG-8018CG	104.857600 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010159	SG-8018CG	9.900000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010160	SG-8018CG	18.430000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010165	SG-8018CG	35.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010166	SG-8018CG	15.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010167	SG-8018CG	9.830400 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010168	SG-8018CG	9.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010169	SG-8018CG	2.097000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010170	SG-8018CG	6.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010171	SG-8018CG	11.059200 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010172	SG-8018CG	9.900000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010173	SG-8018CG	12.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010174	SG-8018CG	33.500000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010175	SG-8018CG	3.570000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010176	SG-8018CG	8.037500 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010177	SG-8018CG	80.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010178	SG-8018CG	35.890700 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010180	SG-8018CG	72.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010181	SG-8018CG	72.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010182	SG-8018CG	75.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010183	SG-8018CG	75.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010184	SG-8018CG	49.152000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010185	SG-8018CG	98.304000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010186	SG-8018CG	98.304000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010187	SG-8018CG	37.125000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010188	SG-8018CG	33.330000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010189	SG-8018CG	33.330000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010190	SG-8018CG	18.432000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010191	SG-8018CG	18.432000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010192	SG-8018CG	7.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010193	SG-8018CG	8.727000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010194	SG-8018CG	21.606000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010195	SG-8018CG	39.321600 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010196	SG-8018CG	41.140000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010197	SG-8018CG	49.500000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010198	SG-8018CG	6.553600 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010199	SG-8018CG	64.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010200	SG-8018CG	8.050000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010201	SG-8018CG	1.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010204	SG-8018CG	8.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010205	SG-8018CG	4.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010206	SG-8018CG	40.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010207	SG-8018CG	41.010000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010208	SG-8018CG	0.910000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010209	SG-8018CG	69.200000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010210	SG-8018CG	32.768000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010211	SG-8018CG	58.982000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010212	SG-8018CG	155.520000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010213	SG-8018CG	65.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010214	SG-8018CG	130.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010215	SG-8018CG	16.384000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010216	SG-8018CG	5.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010217	SG-8018CG	4.410000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010222	SG-8018CG	22.956600 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010223	SG-8018CG	78.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010224	SG-8018CG	16.777216 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010225	SG-8018CG	12.500000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010226	SG-8018CG	12.500000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010227	SG-8018CG	11.059200 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010232	SG-8018CG	36.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010233	SG-8018CG	18.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010234	SG-8018CG	12.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010235	SG-8018CG	24.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010236	SG-8018CG	5.529600 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010237	SG-8018CG	16.934000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010238	SG-8018CG	3.580000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010239	SG-8018CG	2.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010240	SG-8018CG	16.934000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010241	SG-8018CG	38.400000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010242	SG-8018CG	23.040000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010243	SG-8018CG	46.080000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010244	SG-8018CG	92.160000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0056010245	SG-8018CG	1.843200 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm

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SG2016CAN愛普生晶振編碼X1G004801000200低相位抖動SPXO

蘋果手機iPhone折疊屏臺積電芯片與SG2016CAN愛普生晶振X1G004801005600